Researchers from the University of Science and Technology of China and ShanghaiTech University have made significant advancements in the imaging of magnetic domains in non-collinear antiferromagnetic materials such as Mn3Sn and Mn3Ge. These materials, which have a net magnetic moment close to zero, hold promise for future spintronic devices. Using the anomalous Ettingshausen effect and lock-in thermography, the research team was able to successfully map the magnetic domain structure of Mn3Sn, revealing three distinct magnetic domain regions.
The team’s innovative method allows for the simultaneous observation of in-plane and out-of-plane magnetic domains, providing a new perspective for the study of magnetic domain dynamics. The researchers were able to observe changes in the magnetic domain structure during the magnetic reversal process, as well as the three-dimensional rotation of magnetic moments in the memory effect of Mn3Sn. These findings offer valuable insights into the behavior of magnetic domains in non-collinear antiferromagnets, which is crucial for the development of future magnetic storage devices.
The study, published in the National Science Review, highlights the potential of high-precision infrared imaging technology in revealing the magnetic domain structure of these challenging materials. This research represents a significant step forward in understanding the intricate magnetic properties of non-collinear antiferromagnetic materials and paves the way for future advances in spintronic device technology.
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